The invention at the University of California in the field of EUV lithography
New, a cheap source of radiation for lithography, using the hard ultraviolet (extreme ultraviolet, EUV) was patented University of California at San Diego (University of California at San Diego, UCSD), in collaboration with the company Cymer, specializing in the production of lasers for fotolitograficheskih systems. Proposal is to use relatively inexpensive lasers on the basis of carbon dioxide in 32 - nm and more. At that time, momentum should increase of 20 nanoseconds, which is characteristic of modern EUV-lasers, to more than 100 nanoseconds.
At present, as the most likely pretenders to the lithographic technology for the production of 22 - nm or less are considered standards EUV, double patterns, nanopechat, and multiple electron beam lithography. But, judging by the current state of affairs, producers, for the most part relied on EUV-lithograph. Company ASML and Nikon independently of each other are planning to submit a preliminary version of EUV-tools by the end of 2009 This equipment will be used laser-plasma (Laser Produced Plasma, LPP) sources of radiation produced by Cymer. Sources report that the Japanese company GigaPhoton also actively implements a programme for the development and production of LPP-products.
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